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參數(shù)資料
| 型號(hào)： | MMBD7000-V-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 133K |
| 代理商： | MMBD7000-V-GS08 |
www.vishay.com
2
Document Number 85736
Rev. 1.4, 13-May-11
MMBD7000-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on alumina substrate
2) On FR-5 board
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in millimeters (inches): SOT-23
Parameter
Test condition
Symbol
Value
Unit
Typical thermal resistance,
junction to ambient air
RthJA
4171)
K/W
RthJA
5562)
K/W
Maximum junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
IR = 100 AV(BR)
100
V
Leakage current
VR = 50 V
IR
1
A
VR = 100 V
IR
3
A
VR = 50 V, Tj = 125 ° C
IR
100
A
Forward voltage
IF = 1 mA
VF
0.55
0.70
V
IF = 10 mA
VF
0.67
0.82
V
IF = 100 mA
VF
0.75
1.10
V
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
pF
Reverse recovery time
IF = 10 mA to IR = 10 mA,
Irr = 1 mA, RL = 100
Irr
4ns
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43
(0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1
(0.004)
max.
2.35 (0.093)
2.6 (0.102)
0.175
(0.007)
0.098
(0.004)
1.15
(0.045)
0.9
(0.035)
1.20
(0.047)
0.95 (0.037)
2
(0.079)
0.7 (0.028)
0.9
(0.035)
0°
to
8°
0.2
(0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
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