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參數(shù)資料
| 型號(hào)： | MMBD7000S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | MMBD7000S62Z |
MMBD7000
MMBD7000, Rev. D
Small signal Diode
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD7000
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
100
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
5C
3
1
2
SOT-23
12
3
Connection Diagram
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 100 A
100
V
VF
Forward Voltage
IF = 1.0 mA
I
F = 10 mA
I
F = 100 mA
550
670
0.75
700
820
1.1
mV
V
IR
Reverse Current
VR = 100 V
V
R = 50 V
VR = 50 V, TA = 125°C
500
300
100
nA
A
C
T
Total Capacitance
VR = 0, f = 1.0 MHz
1.5
pF
t
rr
Reverse Recovery Time
IF = IR = 10 mA, IRR = 1.0 mA,
R
L = 100
4.0
ns
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