參數(shù)資料
型號(hào)： MMBD6100LT3
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 參考電壓二極管
英文描述： Monolithic Dual Switching Diode
中文描述： 0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
封裝： PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 290K
代理商： MMBD6100LT3
MMBD6100
Monolithic Dual
Switching Diode
Low Current Leakage
SOT-23 Package For Surface Mount Application
Capable of 225Watts of Power Dissipation
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 556
O
C/W Junction To Ambient
(OHFWULFDO&KDUDFWHULVWLFV#
Reverse Voltage
Minimum Reverse
Breakdown Voltage
Forward Current
2
&8QOHVV2WKHUZLVH6SHFLILHG
70V
V
R
V
BR
70V
I
BR
=100 A
I
F
200mA
Power Dissipation
FR-5 Board
(1)
P
TOT
225mW
1.8mW/
O
C
T
A
=25
O
C
Derate above
25
O
C
T
A
=25
O
C
Derate above
25
O
C
8.3ms, half
sine
Power Dissipation
Alumina Substrate
(2)
P
TOT
300mW
2.4mW/
O
C
Peak Forward Surge
Current
Junction
Temperature
I
FSM
500mA
T
J
150
O
C
Forward Voltage
V
F
0.55~0.7V
0.85~1.1V
I
F
=1.0mA
I
F
=100mA
Maximum Reverse
Voltage Leakage
Current
Maximum Junction
Capacitance
Maximum Reverse
Recovery Time
1) FR-5=1.0 × 0.75 × 0.062 in.
Alumina=0.4
×
0.3
×
0.024 in. 99.5
8
alumina.
I
R
0.1 A
V
R
=50V
T
A
=25
O
C,
C
J
2.5pF
Measured at
V
R
=0V
I
F
=I
R
=10mA
I
R (RCE)
=1.0mA
T
rr
4.0nS
5BM
C
A
A
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
A
B
C
D
E
F
G
H
J
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
K
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
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$ %
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M C C
相關(guān)PDF資料
PDF描述
MMBD6100LT1 Monolithic Dual Switching Diodes
MMBD6100LT1 Monolithic Dual Switching Diodes
MMBD6100 MONOLITHIC DUAL SWITCHING DIODE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBD6100LT3G 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
MMBD6100-T1 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE
MMBD6100-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 70V 0.2A 3-Pin SOT-23 T/R
MMBD6100W 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES
MMBD6100W_09 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES
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