參數(shù)資料
型號： MMBD6100LT1
廠商： MOTOROLA INC
元件分類： 參考電壓二極管
英文描述： Monolithic Dual Switching Diodes
中文描述： 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
文件頁數(shù)： 1/2頁
文件大?。?/td> 290K
代理商： MMBD6100LT1
MMBD6100
Monolithic Dual
Switching Diode
Low Current Leakage
SOT-23 Package For Surface Mount Application
Capable of 225Watts of Power Dissipation
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 556
O
C/W Junction To Ambient
(OHFWULFDO&KDUDFWHULVWLFV#
Reverse Voltage
Minimum Reverse
Breakdown Voltage
Forward Current
2
&8QOHVV2WKHUZLVH6SHFLILHG
70V
V
R
V
BR
70V
I
BR
=100 A
I
F
200mA
Power Dissipation
FR-5 Board
(1)
P
TOT
225mW
1.8mW/
O
C
T
A
=25
O
C
Derate above
25
O
C
T
A
=25
O
C
Derate above
25
O
C
8.3ms, half
sine
Power Dissipation
Alumina Substrate
(2)
P
TOT
300mW
2.4mW/
O
C
Peak Forward Surge
Current
Junction
Temperature
I
FSM
500mA
T
J
150
O
C
Forward Voltage
V
F
0.55~0.7V
0.85~1.1V
I
F
=1.0mA
I
F
=100mA
Maximum Reverse
Voltage Leakage
Current
Maximum Junction
Capacitance
Maximum Reverse
Recovery Time
1) FR-5=1.0 × 0.75 × 0.062 in.
Alumina=0.4
×
0.3
×
0.024 in. 99.5
8
alumina.
I
R
0.1 A
V
R
=50V
T
A
=25
O
C,
C
J
2.5pF
Measured at
V
R
=0V
I
F
=I
R
=10mA
I
R (RCE)
=1.0mA
T
rr
4.0nS
5BM
C
A
A
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
A
B
C
D
E
F
G
H
J
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
K
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
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$ %
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M C C
相關PDF資料
PDF描述
MMBD6100LT1 Monolithic Dual Switching Diodes
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相關代理商/技術參數(shù)
參數(shù)描述
MMBD6100LT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diode
MMBD6100LT1G 功能描述:二極管 - 通用，功率，開關 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
MMBD6100LT1G 制造商:ON Semiconductor 功能描述:Small Signal Diode
MMBD6100LT1G_09 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diode
MMBD6100LT3 功能描述:二極管 - 通用，功率，開關 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
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