參數(shù)資料
型號: MMBD4150
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.25 A, 50 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 2/3頁
文件大?。?/td> 170K
代理商: MMBD4150
PAGE . 2
April.1.2011-REV.00
NOTE:
1. A2.0k. variable resistor adjusred for forward current (I
F) to 10mA
2.Input pulse is adjusted to I
R(peak) is equal to 10mA
Figure1. REVERSE RECOVERYTIME EQUIVALENTTEST CIRCUIT
ELECTRICAL CHARACTERISTIC CURVES
MMBD4150
0.1
1
10
0.1
1
10
100
VR, Reverse Bias Voltage (V)
C
J,
J
unc
tion
Capac
itanc
e(
pF
)
0
50
100
150
200
250
300
350
0
25
50
75
100
125
150
TA,Ambient Temperature (°C)
P
D
,Power
Dis
si
pation
(
mW)
0.0001
0.001
0.01
0.1
1
10
20
40
60
80
100
I R
,Rev
er
se
Cur
rent
(
μ
A)
TJ = 150°C
TJ = 125°C
TJ = 75°C
TJ = 25°C
Percent of Rated Peak Reverse Voltage (%)
Fig.4 Typical Reverse Characteristics
Fig.2 Power Derating Curve
Fig.3 Typical Junction Capacitance
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
VF, Forward Voltage (V)
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
I F
,F
or
w
ar
dCur
rent
(
mA)
Fig.5 Typical Forward Characteristics
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