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參數(shù)資料
| 型號(hào)： | MMBD4448D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | TO-236AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | MMBD4448D87Z |
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Units
Tstg
Storage Temperature
-55 to +150
OC
TJ
Operating Junction Temperature
-55 to +150
OC
PD
Total Power Dissipation at TA = 25
OC
350
W
Linear Derating Factor from TA = 25
OC
2.8
mW/OC
ROJA
Thermal Resistance Junction-to-Ambient
357
OC/W
Wiv
Working Inverse Voltage
75
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current (IF)
600
mA
if
Recurrent Peak Forward Current (IF)
700
mA
iF(surge)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
1.0
Amp
Pulse Width = 1.0 microsecond
2.0
Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
MMBD4448
Electrical Characteristics
TA = 25OC unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
B
V
Breakdown Voltage
100
V
I
R
= 100 uA
75
V
I
R
=
5.0 uA
I
R
Reverse Leakage
25
nA
V
R
=
20 V
50
uA
V
R
=
20 V T
A = 150 Deg C
5.0
uA
V
R
=
75 V
V
F
Forward Voltage
620
720
mV
I
F
=
5 mA
1.0
V
I
F
= 100 mA
C
T
Capacitance
2.0
pF
V
R
=
0.0 V, f = 1.0 MHz
T
RR
Reverse Recovery Time
4.0
ns
I
F
= 10 mA I
R = 10 mA
I
RR
= 1.0 Ma, R
L = 100 ohms
V
FM Peak Forward Recovery Voltage
2.5
V
I
F
= 50 mA Pk Square Wave
High Conductance
Fast Diode
1997 Fairchild Semiconductor Corporation
Features:
350 milliwatt Power Dissipation package.
High Breakdown Voltage, Fast Switching Speed.
Typical capacitance less than 1.5 picofarad.
Ordering:
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOT-23
Surface Mount package makes it desirable also as a general
purpose diode.
Top Mark: RAB
3
1
2
PACKAGE
TO-236AB (Low)
3
2 NC
1
CONNECTION DIAGRAMS
Revision A; November 10, 1998
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD4448DW | 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE |
| MMBD4448DW_09 | 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE |
| MMBD4448DW_1 | 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE |
| MMBD4448DW_13 | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:200mW Switching Diodes |
| MMBD4448DW-7 | 功能描述:整流器 75V 200mW RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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