Appendix A Electrical Characteristics
MC9S08DV60 Series Data Sheet, Rev 2
Freescale Semiconductor
383
A.13
Flash
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
A.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a signicant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specically targeted at optimizing EMC performance.
Table A-17. Flash Characteristics
Num
C
Rating
Symbol
Min
Typical
Max
Unit
1
—
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2—
Supply voltage for read operation
0 < fBus < 8 MHz
0<fBus < 20 MHz
VRead
2.7
5.5
V
3—
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4
—
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
μs
5—
Byte program time (random location)(2)
tprog
9
tFcyc
6—
Byte program time (burst mode)(2)
tBurst
4
tFcyc
7—
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
8—
Mass erase time(2)
tMass
20,000
tFcyc
9C
Flash Program/erase endurance3
TL to TH = –40°C to + 125°C
T = 25
°C
3 Typical endurance for Flash is based on the intrinsic bit cell performance. For additional information on how Freescale
Semiconductor denes typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
nFLPE
10,000
—
100,000
—
cycles
10
C
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale Semiconductor denes typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years