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參數(shù)資料
| 型號(hào)： | MK60N512VMD100R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144 |
| 封裝： | 13 X 13 MM, MAPBGA-144 |
| 文件頁(yè)數(shù)： | 28/76頁(yè) |
| 文件大?。?/td> | 1862K |
| 代理商： | MK60N512VMD100R |
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Table 21. NVM reliability specifications (continued)
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycd
Cycling endurance
10 K
TBD
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
TBD
—
years
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree32k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
34
Preliminary
Freescale Semiconductor, Inc.
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