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參數(shù)資料
| 型號： | MJL21196 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PBL, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MJL21196 |
MJL21195 MJL21196
4
Motorola Bipolar Power Transistor Device Data
V
BE(on)
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION
VOL
TAGE
(VOL
TS)
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION
VOL
TAGE
(VOL
TS)
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJL21195
NPN MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMPS)
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
100
10
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
10
100
10
1.0
0.1
1.0
0.1
10
100
10
1.0
0.1
1.0
0.1
100
1.0
10
100
1000
10
1.0
0.1
TJ = 25°C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25°C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25°C
VCE = 20 V
VCE = 5 V
TJ = 25°C
VCE = 20 V
VCE = 5 V
TJ = 25°C
250 ms
50 ms
10 ms
1 Sec
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| MJL21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS |
| MJL3281A | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281A_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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