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參數(shù)資料
| 型號： | MJL21196 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PBL, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MJL21196 |
MJL21195 MJL21196
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
100
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8
—
100
—
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
—
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
—
0.8
0.08
—
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
—
500
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤2%
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
,CURRENT
BANDWIDTH
PRODUCT
(MHz)
T
PNP MJL21195
NPN MJL21196
IC, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0
10
0.1
7.5
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
0.1
1.0
VCE = 10 V
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
TJ = 25°C
ftest = 1 MHz
3.5
3.0
6.5
5.5
4.5
3.5
2.5
1.5
F
,CURRENT
BANDWIDTH
PRODUCT
(MHz)
T
F
VCE = 5 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJL21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS |
| MJL3281A | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281A_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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