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參數(shù)資料
| 型號： | MJL16218 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 15 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-3PBL |
| 封裝： | TO-3PBL, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 157K |
| 代理商： | MJL16218 |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
Collector Cutoff Current
(VCE = 1500 V, VBE = 0 V)
(VCE = 1200 V, VBE = 0 V)
ICES
—
—
—
—
250
25
μ
Adc
Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0)
Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0)
Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0)
ON CHARACTERISTICS (2)
IEBO
—
8.0
650
—
11
—
25
—
—
μ
Adc
Vdc
Vdc
V(BR)EBO
VCEO(sus)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 2.0 Adc)
(IC = 3.0 Adc, IB = 0.6 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 1.0 A, VCE = 5.0 Vdc)
(IC = 12 A, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
—
—
0.17
0.14
1.0
0.5
Vdc
Base–Emitter Saturation Voltage
DC Current Gain
VBE(sat)
hFE
—
—
4.0
0.9
24
6.0
1.5
—
—
Vdc
—
Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5
μ
H)
Output Capacitance
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)
SWITCHING CHARACTERISTICS
tds
Cob
—
—
350
300
—
500
ns
pF
fT
—
0.8
—
MHz
Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection
Simulator Circuit Table 2
Storage
Fall Time
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
tsv
tfi
—
—
2000
175
3000
250
ns
I
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 1. Maximum Forward Bias
Safe Operating Area
1.0
10
1.0
I
0.1
1000
300
1500
IC/IB = 5
TJ
≤
100
°
C
0
VCE, COLLECTOR–EMITTER VOLTAGE (V)
900
Figure 2. Maximum Reverse Bias
Safe Operating Area
10
18
6
2
600
1200
100
0.01
100
10
14
SAFE OPERATING AREA
250 ms
100 ms
50 ms
10 ms
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| MJL21193 | 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MJL21193G | 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL21194 | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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