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參數(shù)資料
| 型號： | MJE800 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 84K |
| 代理商： | MJE800 |
MJE700, MJE702, MJE703 (PNP) MJE800, MJE802, MJE803 (NPN)
http://onsemi.com
3
0.04
0.2
2.0
0.1
0.06
0.4
1.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
t
2.0
1.0
0.8
0.6
0.4
0.2
t
s
Figure 2. Switching Times Test Circuit
t
r
t
d
@ V
BE(off)
= 0
PNP
NPN
4.0
0.6
V
2
APPROX
+8.0 V
0
≈
6.0 k
SCOPE
V
CC
30 V
R
C
51
For t
d
and t
r
, D
1
id disconnected
and V
= 0, R
and R
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25 s
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
B
≈
100 mA
B
≈
100 mA
V
1
APPROX
12 V
TUT
R
B
D
1
≈
150
t
f
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC
(t) = r(t)
JC
JC
= 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
Figure 4. Thermal Response (MJE700, 800 Series)
0.03
3.0
30
300
0.3
(
10
7.0
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 5. MJE700 Series
0.1
100
2.0
5.0
0.5
MJE702, 703
MJE700
dc
1.0
0.7
3.0
1.0ms
70
50
30
20
10
7.0
5.0
100 s
T
J
= 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
I
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 6. MJE800 Series
0.1
I
100
70
50
30
20
10
7.0
5.0
0.2
0.3
10
7.0
2.0
5.0
0.5
1.0
0.7
3.0
0.2
0.3
5.0ms
100 s
1.0ms
5.0ms
dc
T
J
= 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on T
J(pk)
= 150 C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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參數(shù)描述 |
|---|---|
| MJE800G | 功能描述:達(dá)林頓晶體管 4A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE800STU | 功能描述:達(dá)林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE800T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE801 | 功能描述:達(dá)林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE801STU | 功能描述:達(dá)林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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