參數(shù)資料
型號(hào): MJE702
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: DARLINGTON POWER TRANSISTORS COMPLEMENTARY
中文描述: 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225
封裝: PLASTIC, CASE 77-09, 3 PIN
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 256K
代理商: MJE702
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1000
500
θ
JC(t) = r(t)
θ
JC
θ
JC = 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
Figure 5. Thermal Response (MJE700, 800 Series)
0.03
3.0
30
300
0.3
(
10
7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
100
2.0
5.0
0.5
Figure 6. MJE700 Series
MJE702, 703
MJE700
dc
1.0
0.7
3.0
1.0 ms
70
50
30
20
10
7.0
5.0
100
μ
s
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
Figure 7. MJE800 Series
I
100
70
50
30
20
10
7.0
5.0
0.2
0.3
10
7.0
2.0
5.0
0.5
1.0
0.7
3.0
0.2
0.3
5.0 ms
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVE–REGION SAFE–OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 6 and 7 are based on TJ(pk) = 150 C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4
or 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
1.0
5.0
0.2
Figure 8. MJE700T
0.5
2.0
5.0
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
Figure 9. MJE800T
I
100
70
50
30
20
10
7.0
5.0
100
70
50
30
20
10
7.0
10
1.0
5.0
0.2
0.5
2.0
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
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MJE702T 制造商:MOSPEC 制造商全稱(chēng):Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W)
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