參數(shù)資料
型號： MJE4353
廠商： MOSPEC SEMICONDUCTOR CORP.
英文描述： POWER TRANSISTORS(16A,100-160V,125W)
中文描述： 功率晶體管（16A條,100 - 160V，功率為125）
文件頁數(shù)： 2/6頁
文件大小： 197K
代理商： MJE4353
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
Collector–Emitter Cutoff Current
MJE4343, MJE4353
ICEO
—
750
μ
Adc
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
—
5.0
(VBE = 7.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
hFE
—
(IC = 8.0 Adc, IB = 800 mA)
—
2.0
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
fT
1.0
—
MHz
(2) fT =
hfe
ftest.
t
μ
Figure 2. Switching Times Test Circuit
+11 V
25
μ
s
0
–9.0 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
Note:
Reverse polarities to test PNP devices.
3.0
2.0
IC, COLLECTOR CURRENT (AMP)
TJ = 25
°
C
IC/IB = 10
VCE = 30 V
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.2
0.5 0.7
5.0
2.0
1.0
3.0
20
Figure 3. Typical Turn–On Time
10
7.0
tr
0.3
td @ VBE(off) = 5.0 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE4353G 功能描述:兩極晶體管 - BJT 16A 160V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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