參數(shù)資料
型號： MJE4353
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
中文描述： 16 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-218
文件頁數(shù)： 1/6頁
文件大小： 197K
代理商： MJE4353
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High Collector–Emitter Sustaining Voltage —
NPN
VCEO(sus) = 140 Vdc — MJE4342
VCEO(sus)
= 160 Vdc — MJE4343
High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
Low Collector–Emitter Saturation Voltage —
PNP
MJE4352
MJE4353
MAXIMUM RATINGS
MJE4342
MJE4343
Temperature Range
5.0
s, Duty Cycle
(1) Pulse Test: Pulse Width
10%.
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
TA, AMBIENT TEMPERATURE (
°
C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
P
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE4342/D
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140–160 VOLTS
CASE 340D–01
TO–218 TYPE
REV 2
相關(guān)PDF資料
PDF描述
MJE4342 POWER TRANSISTORS(16A,100-160V,125W)
MJE4343 POWER TRANSISTORS(16A,100-160V,125W)
MJE4352 POWER TRANSISTORS(16A,100-160V,125W)
MJE4353 POWER TRANSISTORS(16A,100-160V,125W)
MJE521 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE4353G 功能描述:兩極晶體管 - BJT 16A 160V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5030 制造商:ON Semiconductor 功能描述:
MJE5170 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors
MJE5171 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors
MJE5172 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors
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