參數(shù)資料
型號: MJE3440
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/5頁
文件大小: 313K
代理商: MJE3440
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
8.33
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 250
20
A
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 300
500
A
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 200 V
50
A
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
20
A
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 50 mA
IB = 4 mA
0.5
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 50 mA
IB = 4 mA
0.3
V
VBE
Base-Emitter Voltage
IC = 50 mA
VCE = 10 V
0.8
V
hFE
DC Current Gain
IC = 2 mA
VCE = 10 V
IC = 20 mA
VCE = 10 V
30
50
200
hfe
Small Signal Current
Gain
IC = 5 mA
VCE = 10 V
f = 1 KHz
25
fT
Transistor Frequency
IC = 10 mA
VCE = 10 V
f = 5 MHz
15
MHz
CCBO
Collector-Base
Capacitance
VCB = 10 V
IE = 0
f = 1 MHz
10
pF
Pulsed: Pulse duration = 300s, duty cycle ≤ 1.5 %
Safe Operating Area
Derating Curve
MJE3440
2/5
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MJE350T 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126
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