型號: | MJE2901 |
廠商: | ADVANCED SEMICONDUCTOR INC |
元件分類: | 功率晶體管 |
英文描述: | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
封裝: | TO-127VAR, 3 PIN |
文件頁數(shù): | 1/1頁 |
文件大小: | 96K |
代理商: | MJE2901 |
相關(guān)PDF資料 |
PDF描述 |
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MJE3055TG-TN3-R | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
MJE3055TG-TM3-T | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-251 |
MJE3055T | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
MJE2955T | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
MJE340 | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MJE2901T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
MJE2955 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose and Switching Applications |
MJE2955 (TD127) | 制造商: 功能描述: 制造商:undefined 功能描述: |
MJE2955T | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
MJE2955T | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220 |