參數(shù)資料
型號： MJE18604D2BU
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 23/61頁
文件大?。?/td> 386K
代理商： MJE18604D2BU
MJE18604D2
3–781
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
230
500
pF
Input Capacitance
(VCE = 8 Vdc)
Cib
480
1000
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 40 s)
Delay Time
@ TC = 25°C
@ TC = 125°C
td
95
110
150
ns
Rise Time
IC = 0.5 Adc
IB1 = 66 mAdc
@ TC = 25°C
@ TC = 125°C
tr
475
900
750
ns
Storage Time
B1
IB2 = 390 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
ts
400
910
700
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
675
775
850
ns
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
440
570
ns
Storage Time
IC = 0.3 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
4
5.9
s
Fall Time
B1
IB2 = 50 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
375
675
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
4.5
6.6
s
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
465
550
600
ns
Storage Time
IC = 0.3 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
500
1800
800
ns
Fall Time
B1
IB2 = 150 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
800
550
1000
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
1.5
2.4
1.75
s
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
550
1300
ns
Storage Time
IC = 0.5 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
4.35
5
s
Fall Time
B1
IB2 = 50 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
500
2000
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
4.8
7
s
Delay Time
IC =0 5Adc
@ TC = 25°C
td
100
300
ns
Rise Time
IC = 0.5 Adc
IB1 = 50 mAdc
@ TC = 25°C
tr
300
800
ns
Storage Time
B1
IB2 = 250 mAdc
VCC = 125 V
@ TC = 25°C
ts
1
1.2
s
Fall Time
VCC = 125 V
@ TC = 25°C
tf
200
350
ns
相關(guān)PDF資料
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MJE2361T 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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