參數(shù)資料
型號： MJE18604D2BG
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 23/61頁
文件大?。?/td> 386K
代理商： MJE18604D2BG
MJE18604D2
3–781
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
230
500
pF
Input Capacitance
(VCE = 8 Vdc)
Cib
480
1000
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 40 s)
Delay Time
@ TC = 25°C
@ TC = 125°C
td
95
110
150
ns
Rise Time
IC = 0.5 Adc
IB1 = 66 mAdc
@ TC = 25°C
@ TC = 125°C
tr
475
900
750
ns
Storage Time
B1
IB2 = 390 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
ts
400
910
700
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
675
775
850
ns
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
440
570
ns
Storage Time
IC = 0.3 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
4
5.9
s
Fall Time
B1
IB2 = 50 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
375
675
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
4.5
6.6
s
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
465
550
600
ns
Storage Time
IC = 0.3 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
500
1800
800
ns
Fall Time
B1
IB2 = 150 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
800
550
1000
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
1.5
2.4
1.75
s
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
550
1300
ns
Storage Time
IC = 0.5 Adc
IB1 = 50 mAdc
@ TC = 25°C
@ TC = 125°C
ts
4.35
5
s
Fall Time
B1
IB2 = 50 mAdc
VCC = 125 V
@ TC = 25°C
@ TC = 125°C
tf
500
2000
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
4.8
7
s
Delay Time
IC =0 5Adc
@ TC = 25°C
td
100
300
ns
Rise Time
IC = 0.5 Adc
IB1 = 50 mAdc
@ TC = 25°C
tr
300
800
ns
Storage Time
B1
IB2 = 250 mAdc
VCC = 125 V
@ TC = 25°C
ts
1
1.2
s
Fall Time
VCC = 125 V
@ TC = 25°C
tf
200
350
ns
相關(guān)PDF資料
PDF描述
MJE18604D2BA 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2AN 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2AJ 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18604D2BV 3 A, 800 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE200 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE200_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors
MJE200G 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE200STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE200TSTU 功能描述:兩極晶體管 - BJT NPN Si Epitaxial Short Leads RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*