參數(shù)資料
型號(hào)： MJE18604D2AJ
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 12/61頁(yè)
文件大?。?/td> 386K
代理商： MJE18604D2AJ
MJE18604D2
3–780
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH, RBE = 200 )
VCER(sus)
800
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
1600
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14
Vdc
Collector Cutoff Current
(VCBO = Rated VCBO, IB = 0)
ICBO
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 1300 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
1000
100
Adc
Emitter–Cutoff Current
(VEB = 11 Vdc, IC = 0)
IEBO
500
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
0.8
0.6
1.1
1
Vdc
(IC = 1 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
0.8
1
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.9
0.8
1.2
1.1
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 25 mAdc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
1
1.7
1.25
Vdc
(IC = 0.5 Adc, IB = 50 mAdc)
@ TC = 25°C
@ TC = 125°C
2.1
4
2.4
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
3.7
5
DC Current Gain
(IC = 0.4 Adc, VCE = 3 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
20
6
10
40
—
(IC = 5 mAdc, VCE = 10 Vdc)
@ TC = 25°C
@ TC = 125°C
20
35
55
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
IC = 0.3 Adc
IB1 =50mA
@ 1
s
@ TC = 25°C
@ TC = 125°C
VCE(dsat)
4.7
9.3
V
Dynamic Saturation
Voltage:
Determined 1
s and
IB1 = 50 mA
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
2.6
5.4
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 0.5 Adc
IB1 =50mA
@ 1
s
@ TC = 25°C
@ TC = 125°C
9.7
18
90% of final IB1
IB1 = 50 mA
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
6.4
12.3
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
VEC
0.9
0.6
1.2
V
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
1.05
0.7
1.5
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/s)
@ TC = 25°C
@ TC = 125°C
tfr
0.9
1.5
s
(IF = 1.0 Adc, di/dt = 10 A/s)
@ TC = 25°C
@ TC = 125°C
1.15
1.6
相關(guān)PDF資料
PDF描述
MJE18604D2 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18604D2BV 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2AK 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2DW 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BC 3 A, 800 V, NPN, Si, POWER TRANSISTOR
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