參數(shù)資料
型號(hào): MJE18206BD
廠商: ON SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: 8 A, 600 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 67/67頁(yè)
文件大?。?/td> 543K
代理商: MJE18206BD
MJE18206 MJF18206
3–777
Motorola Bipolar Power Transistor Device Data
R
θJC(t) = r(t) RθJC
R
θJC = 1.25°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
t, TIME (ms)
Figure 22. Typical Thermal Response (Z
θJC(t)) for MJE18206
r(t)
,TRANSIENT
THERMAL
0.01
0.1
1
10
100
0.1
1
1000
TYPICAL THERMAL RESPONSE
(IB1 = IB2 FOR ALL CURVES)
RESIST
ANCE
(NORMALIZED)
0.01
t, TIME (ms)
Figure 23. Typical Thermal Response (Z
θJC(t)) for MJF18206
r(t)
,TRANSIENT
THERMAL
0.01
0.1
1
10
100
0.1
1
100000
RESIST
ANCE
(NORMALIZED)
1000
10000
R
θJC(t) = r(t) RθJC
R
θJC = 3.55°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
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