參數(shù)資料
型號(hào)： MJE18206AK
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 600 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 12/67頁(yè)
文件大小： 543K
代理商： MJE18206AK
MJE18206 MJF18206
3–770
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
(IC = 200 mA, L = 25 mH, R = 200 )
VCEO(sus)
VCER(sus)
550
600
630
700
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA, IE = 0)
VCBO
1200
1320
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA, IC = 0)
VEBO
10
12.9
Vdc
Collector Cutoff Current (VCE = 550 V, IB = 0)
Collector Cutoff Current (VCE = 550 V, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
200
2000
Adc
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
Collector Cutoff Current (VCE = 1000 V, VBE = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
1000
100
Adc
Collector Cutoff Current
(VCB = 1200 V, IE = 0)
ICBO
100
Adc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
0.77
0.67
1
0.9
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.85
0.75
1.1
1
(IC = 3 Adc, IB = 0.6 Adc)
@ TC = 25°C
@ TC = 125°C
0.91
0.8
1.1
1
Collector–Emitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.3
0.4
0.75
1
Vdc
(IC = 3 Adc, IB = 0.6 Adc)
@ TC = 25°C
@ TC = 125°C
0.4
0.8
0.75
1.25
DC Current Gain
(IC = 0.5 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
18
25
—
(IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
18
20
45
(IC = 3 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
5
4
8
6
—
(IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
11
33
50
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
200
pF
Input Capacitance (VEB = 8 Vdc)
Cib
2000
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Vlt
IC = 1.3 Adc
IB1 130 mAdc
@ 1
s
@ TC = 25°C
VCE(dsat)
7.5
V
Voltage:
Determined 1
s and
IB1 = 130 mAdc
VCC = 300 V
@ 3
s
@ TC = 25°C
4.5
3
s respectively after
rising IB1 reaches
IC = 3 Adc
IB1 0 6 Adc
@ 1
s
@ TC = 25°C
14.5
rising IB1 reaches
90% of final IB1
IB1 = 0.6 Adc
VCC = 300 V
@ 3
s
@ TC = 25°C
6
相關(guān)PDF資料
PDF描述
MJE18206BU 8 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18206BA 8 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18206BD 8 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BS 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BG 3 A, 800 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE182G 功能描述:兩極晶體管 - BJT 3A 80V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE182STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18604 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS
MJE18604D2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS
MJE200 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*