參數(shù)資料
型號(hào)： MJE18206BA
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 600 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/67頁(yè)
文件大?。?/td> 543K
代理商： MJE18206BA
3–769
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE NPN Bipolar
Power Transistor for Electronic
Light Ballast and Switching
Power Supply Applications
The MJE/MJF18206 have an application specific state–of–the–art die dedicated to
the electronic ballast (“l(fā)ight ballast”) and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE18206
MJF18206
Unit
Collector–Emitter Voltage
VCEO
600
Vdc
Collector–Base Voltage
VCBO
1200
Vdc
Collector–Emitter Voltage
VCES
1200
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
8
16
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
5
9
Adc
RMS Isolation Voltage (2)
Per Figure 22
(for 1 sec, R.H.
≤ 30%)
Per Figure 23
TC = 25°C
Per Figure 24
VISOL1
VISOL2
VISOL3
4500
3500
1500
Volts
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_C
PD
100
0.8
40
0.32
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18206
MJF18206
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.25
62.5
3.125
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18206
MJF18206
POWER TRANSISTORS
8 AMPERES
1200 VOLTS
40 and 100 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
相關(guān)PDF資料
PDF描述
MJE18206BD 8 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BS 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BG 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2BA 3 A, 800 V, NPN, Si, POWER TRANSISTOR
MJE18604D2AN 3 A, 800 V, NPN, Si, POWER TRANSISTOR
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