參數(shù)資料
型號： MJE172
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： TO-126, 3 PIN
文件頁數(shù)： 3/3頁
文件大?。?/td> 179K
代理商： MJE172
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
30
2.0
5.0
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 5. MJE171, MJE172
500
s
5.0 ms
dc
1.0
20
10
50
5.0
3.0
2.0
1.0
100
s
TJ = 150°C
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
Figure 6. MJE181, MJE182
I C
,COLLECT
OR
CURRENT
(AMP)
MJE171
MJE172
0.02
0.05
0.2
0.5
30
20
10
50
5.0
3.0
2.0
1.0
100
10
2.0
5.0
0.1
1.0
0.02
0.05
0.2
0.5
70
100
s
500
s
5.0 ms
dc
MJE181
MJE182
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
TJ = 150°C
7.0
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 7. Turn–Off Time
t,
TIME
(ns)
30
20
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
1
3
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
10
50
70
100
30
Figure 8. Capacitance
50
20
10
5.0
3.0
2.0
1.0
0.5
C,
CAP
ACIT
ANCE
(pF)
0.7
TJ = 25°C
Cib
Cob
NPN MJE181/182
PNP MJE171/172
PNP MJE171/MJE172
NPN MJE181/MJE182
20
30
7.0
www.mccsemi.com
MJE172 PNP
MCC
MJE182 NPN
相關(guān)PDF資料
PDF描述
MJE172-BP 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
MJE182-BP 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE181 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE180 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE170 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE172 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -80V 制造商:STMicroelectronics 功能描述:Bipolar Transistor
MJE172_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE172G 功能描述:兩極晶體管 - BJT 3A 80V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE172STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE180 功能描述:兩極晶體管 - BJT NPN Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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