參數(shù)資料
型號： MJE172-BP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： TO-126, 3 PIN
文件頁數(shù)： 1/3頁
文件大小： 179K
代理商： MJE172-BP
MJE172 PNP
MJE182 NPN
Silicon Power
Transistor
Features
This device is designed for low power audio amplifier and low current,
high speed switching applications.
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current, Continuous
Peak
3.0
6.0
A
IB
Base Current
1.0
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
1.5
0.012
W
W/
OC
PD
Total Device Dissipation
Derate above 25
OC
12.5
0.1
W
W/
OC
RJC
Thermal Resistance, Junction to Case
10
OC/W
RJA
Thermal Resistance, Junction to Ambient
83.4
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Sustaining Voltage
(IC=10mAdc, IE=0)
80
---
Vdc
ICBO
Collector Cutoff Current
(VCB=100Vdc, IE=0)
(VCB=100Vdc, IE=0, TC=150
OC)
---
0.1
uAdc
mAdc
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=1.0Vdc)
(IC=1.5Adc, VCE=1.0Vdc)
50
30
12
250
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
(IC=1.5Adc, IB=150mAdc)
(IC=3.0Adc, IB=600mAdc)
---
0.3
0.9
1.7
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=1.5Adc, IB=150mAdc)
(IC=3.0Adc, IB=600mAdc)
---
1.5
2.0
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=500mAdc, VCE=1.0Vdc)
---
1.2
Vdc
TO-126