參數(shù)資料
型號(hào)： MJE13009AF
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 12 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 21/65頁(yè)
文件大?。?/td> 517K
代理商： MJE13009AF
Outline Dimensions and Leadform Options
5–2
Motorola Bipolar Power Transistor Device Data
Outline Dimensions
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
–––
1.050
–––
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
–––
0.830
–––
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
CASE 1–07
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y M
T
M
Y
M
0.13 (0.005)
T
–Q–
–Y–
2
1
U
L
G
B
V
H
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
CASE 77–08
–B–
–A–
M
K
F
C
Q
H
V
G
S
D
J
R
U
13
2
2 PL
M
A
M
0.25 (0.010)
B M
M
A
M
0.25 (0.010)
B M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
–––
1.02
–––
__
(TO–204AA)
(TO–225AA)
CASE 152-02
EB C
12
3
Q
G
N
F
K
D
A
C
L
B
R
H
J
NOTES:
1. LEADS WITHIN 0.15 (0.006) TOTAL OF TRUE
POSITION AT CASE, AT MAXIMUM MATERIAL
CONDITION.
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
9.14
9.53
0.360
0.375
B
6.60
7.24
0.260
0.285
C
5.41
5.66
0.213
0.223
D
0.38
0.53
0.015
0.021
F
3.18
3.33
0.125
0.131
G
2.54 BSC
0.100 BSC
H
3.94
4.19
0.155
0.165
J
0.36
0.41
0.014
0.016
K
11.63
12.70
0.458
0.500
L
24.58
25.53
0.968
1.005
N
5.08 BSC
0.200 BSC
Q
2.39
2.69
0.094
0.106
R
1.14
1.40
0.045
0.055
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTED TO TAB)
相關(guān)PDF資料
PDF描述
MJE13009AK 12 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13009BV 12 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13009BG 12 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE1320DW 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE1320BV 2 A, 900 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE13009D 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009DG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009DL-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009F 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
MJE13009G 功能描述:兩極晶體管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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