參數(shù)資料
型號(hào)： MJE13009AF
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 12 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 12/65頁
文件大小： 517K
代理商： MJE13009AF
MJE13009
3–677
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
1
5
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 1
Clamped Inductive SOA with Base Reverse Biased
—
See Figure 2
*ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
hFE
8
6
—
40
30
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 3 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
VCE(sat)
—
—
1
1.5
3
2
Vdc
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
VBE(sat)
—
—
1.2
1.6
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
180
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.06
0.1
s
Rise Time
(VCC = 125 Vdc, IC = 8 A,
IB1 =IB2 =16A t = 25 s
tr
—
0.45
1
s
Storage Time
IB1 = IB2 = 1.6 A, tp = 25 s,
Duty Cycle
v 1%)
ts
—
1.3
3
s
Fall Time
tf
—
0.2
0.7
s
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
(IC = 8 A, Vclamp = 300 Vdc,
tsv
—
0.92
2.3
s
Crossover Time
( Cclam
IB1 = 1.6 A, VBE(off) = 5 Vdc, TC = 100_C)
tc
—
0.12
0.7
s
*Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
相關(guān)PDF資料
PDF描述
MJE13009AK 12 A, 400 V, NPN, Si, POWER TRANSISTOR
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參數(shù)描述
MJE13009D 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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MJE13009G 功能描述:兩極晶體管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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