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MJE13007 MJF13007
3–668
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
Vdc
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
ICES
—
0.1
1.0
mAdc
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
IEBO
—
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
—
See Figure 7
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
8.0
5.0
—
40
30
—
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
VCE(sat)
—
1.0
2.0
3.0
Vdc
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
VBE(sat)
—
1.2
1.6
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
4.0
14
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
80
—
pF
Collector to Heatsink Capacitance, MJF13007
Cc–hs
—
3.0
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.025
0.1
s
Rise Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 =IB2 =10A tp =25 s
tr
—
0.5
1.5
Storage Time
IB1 = IB2 = 1.0 A, tp = 25 s,
Duty Cycle
≤ 1.0%)
ts
—
1.8
3.0
Fall Time
tf
—
0.23
0.7
Inductive Load, Clamped (Table 1)
Voltage Storage Time
VCC = 15 Vdc, IC = 5.0 A
TC = 25°C
Vclamp = 300 Vdc
TC = 100°C
tsv
—
1.2
1.6
2.0
3.0
s
Crossover Time
IB(on) = 1.0 A, IB(off) = 2.5 A
TC = 25°C
LC = 200 HTC = 100°C
tc
—
0.15
0.21
0.30
0.50
s
Fall Time
TC = 25°C
TC = 100°C
tfi
—
0.04
0.10
0.12
0.20
s
* Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
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| MJE13007BU | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BC | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BA | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007AJ | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007AN | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13007F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Switch Mode Application |
| MJE13007F_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
| MJE13007F_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13007G | 功能描述:兩極晶體管 - BJT 8A 400V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13007G-M-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
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