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參數(shù)資料
| 型號(hào)： | MJE13005DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 45/63頁 |
| 文件大?。?/td> | 453K |
| 代理商： | MJE13005DW |
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MJE13005
3–665
Motorola Bipolar Power Transistor Device Data
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
TEST
CIRCUITS
CIRCUIT
V
ALUES
TEST
W
A
VEFORMS
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
5 V
PW
DUTY CYCLE
≤ 10%
tr, tf ≤ 10 ns
68
1 k
0.001
F
0.02
F
1N4933
270
+5 V
1 k
2N2905
47
1/2 W
100
–VBE(off)
MJE200
T.U.T.
IB
RB
1N4933
33
2N2222
1 k
MJE210
VCC
+5 V
L
IC
MR826*
Vclamp
*SELECTED FOR
≥ 1 kV
VCE
5.1 k
51
+125 V
RC
SCOPE
– 4.0 V
D1
RB
TUT
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICpk)
VCC
t2 ≈
Lcoil (ICpk)
Vclamp
+10 V
25
s
0
–8 V
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200
H/20 A
Lcoil = 200 H
VCC = 20 V
Vclamp = 300 Vdc
VCC = 125 V
RC = 62
D1 = 1N5820 or Equiv.
RB = 22
Test Equipment
Scope–Tektronics
475 or Equivalent
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
t1
IC
VCE
TIME
IC(pk)
VCE or
Vclamp
t2
t
tf
tf CLAMPED
tf UNCLAMPED ≈ t2
Table 2. Test Conditions for Dynamic Performance
t, TIME (ms)
1
0.01
0.7
0.2
0.1
0.05
0.02
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
0.05
1
2
5
10
20
50
100
200
500
Z
θJC(t) = r(t) RθJC
R
θJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.5
0.2
(NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.02
Figure 10. Typical Thermal Response [Z
θJC(t)]
0.1
0.02
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR) |
| MJE13005F_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
| MJE13005F_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005G | 功能描述:兩極晶體管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005G-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
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