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參數(shù)資料
| 型號(hào)： | MJE13005DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 12/63頁(yè) |
| 文件大小： | 453K |
| 代理商： | MJE13005DW |
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MJE13005
3–662
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
1
5
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 11
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 12
*ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
hFE
10
8
—
60
40
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
VCE(sat)
—
—
0.5
0.6
1
Vdc
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
VBE(sat)
—
—
1.2
1.6
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
65
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 2)
Delay Time
td
—
0.025
0.1
s
Rise Time
(VCC = 125 Vdc, IC = 2 A,
IB1 =IB2 =04A t = 25 s
tr
—
0.3
0.7
s
Storage Time
IB1 = IB2 = 0.4 A, tp = 25 s,
Duty Cycle
v 1%)
ts
—
1.7
4
s
Fall Time
tf
—
0.4
0.9
s
Inductive Load, Clamped (Table 2, Figure 13)
Voltage Storage Time
(I
2 A V
300 Vd
tsv
—
0.9
4
s
Crossover Time
(IC = 2 A, Vclamp = 300 Vdc,
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)
tc
—
0.32
0.9
s
Fall Time
IB1 0.4 A, VBE(off) 5 Vdc, TC 100 C)
tfi
—
0.16
—
s
*Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR) |
| MJE13005F_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
| MJE13005F_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005G | 功能描述:兩極晶體管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005G-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
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