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參數(shù)資料
| 型號(hào)： | MJD6036 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| 中文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 270K |
| 代理商： | MJD6036 |
4
Motorola Bipolar Power Transistor Device Data
V
V
IC, COLLECTOR CURRENT (AMP)
PNP MJD6036
NPN MJD6039
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Figure 9. “On” Voltages
0.04
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.2
2 k
800
4 k
h
VCE = 3 V
TC = 125
°
C
3 k
0.1
0.6
25
°
C
–55
°
C
1 k
0.4
1
6 k
400
600
2
4
0.04
300
0.06
0.2
2 k
800
4 k
h
3 k
0.1
0.6
25
°
C
–55
°
C
1 k
0.4
1
6 k
400
600
2
4
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2
5
IC =
0.5 A
1 A
1
3
1
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V
2.2
1.8
0.6
0.2
0.06
0.2
2
0.1
0.6
0.4
1
4
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V
2.2
1.8
0.6
0.2
0.06
0.2
2
0.1
0.6
0.4
1
4
20
50
100
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2
5
1
3
1
20
50
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
IC =
0.5 A
TJ = 125
°
C
VCE = 3 V
TJ = 125
°
C
2 A
4 A
TJ = 125
°
C
1 A
2 A
4 A
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD6036-1 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6036T4 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039-1 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD6036-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6036T4 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistors |
| MJD6039-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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