參數(shù)資料
型號: MJD6036
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
中文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/6頁
文件大?。?/td> 270K
代理商: MJD6036
3
Motorola Bipolar Power Transistor Device Data
I
Figure 3. Thermal Response
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
T
0.7
0.5
1
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TJ = 150
°
C
CURVES APPLY BELOW RATED VCEO
10
50
2
0.1 ms
dc
0.1
1
3
7
10
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
50
100
200 300
500
30
20
70
0.2
SINGLE PULSE
D = 0.5
0.05
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
TA
SURFACE
MOUNT
0.7
1 ms
5 ms
3
5
7
0.1
0.01
0.5 ms
TC
TYPICAL ELECTRICAL CHARACTERISTICS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150 C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
C
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25
°
C
200
10
50
70
100
0.1
2
6
20
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相關PDF資料
PDF描述
MJD6036-1 SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6036T4 SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6039 SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6039-1 SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6039T4 SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
相關代理商/技術參數(shù)
參數(shù)描述
MJD6036-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6036T4 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6039 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistors
MJD6039-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MJD6039T4 功能描述:達林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel