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參數(shù)資料
| 型號(hào)： | MJD6036-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 128K |
| 代理商： | MJD6036-1 |
MJD6036 MJD6039
http://onsemi.com
2
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus)
80
—
Vdc
Collector–Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
—
10
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 2 Adc, VCE = 4 Vdc)
hFE
1000
500
—
—
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
VCE(sat)
—
2.5
Vdc
Base–Emitter On Voltage
(IC = 2 Adc, VCE = 4 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD6036
MJD6039
Cob
—
200
100
pF
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
0.04
0.2
2
0.1
0.06
0.4
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t,TIME
(s)
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
tr
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0
PNP
NPN
4
0.6
V2
APPROX
+8 V
0
≈ 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 s
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
-12 V
TUT
RB
D1
≈ 120
相關(guān)PDF資料 |
PDF描述 |
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| MJD6036T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD6039-1 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD6036T4 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistors |
| MJD6039-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD6039T4G | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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