- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182422 > MJD50-1 (ON SEMICONDUCTOR) 1 A, 400 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJD50-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MJD50-1 |
High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier,
SWITCHMODE
t power supply drivers and other switching
applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) — V
CEO(sus)
1 A Rated Collector Current
MAXIMUM RATINGS
Rating
Symbol
MJD47
MJD50
Unit
Collector–Emitter Voltage
VCEO
250
400
Vdc
Collector–Base Voltage
VCB
350
500
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
1
2
Adc
Base Current
IB
0.6
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Total Power Dissipation* @ TA = 25_C
Derate above 25
_C
PD
1.56
0.0125
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
80
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) MJD47
(IC = 30 mAdc, IB = 0)
MJD50
VCEO(sus)
250
400
—
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MJD47
(VCE = 300 Vdc, IB = 0)
MJD50
ICEO
—
0.2
mAdc
*When surface mounted on minimum pad sizes recommended.
(continued)
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MJD47/D
NPN SILICON
POWER TRANSISTORS
1 AMPERE
250, 400 VOLTS
15 WATTS
MJD47
MJD50
*ON Semiconductor Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
CASE 369A–13
CASE 369–07
*
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD47-1 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJD50I | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJD47I | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJD50 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJDS-G | FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD50G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。