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參數(shù)資料
| 型號(hào)： | MJD50-1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | MJD50-1 |
3
Motorola Bipolar Power Transistor Device Data
0.02
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V
1.4
1.2
0.4
0
0.6
0.2
VBE(sat) @ IC/IB = 5 V
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5 V
0.02
IC, COLLECTOR CURRENT (AMPS)
2
0.06
0.2
2
40
10
100
h
VCE = 10 V
TJ = 150
°
C
60
0.1
0.6
25
°
C
–55
°
C
20
0.04
0.4
1
200
4
6
Figure 3. DC Current Gain
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
R
Figure 4. “On” Voltages
0.7
0.5
Figure 5. Thermal Response
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.06
0.2
2
0.1
0.6
0.04
0.4
1
0.2
SINGLE PULSE
D = 0.5
0.05
TJ = 25
°
C
0.1
0.02
0.01
I
5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.005
500
1
0.2
0.05
0.02
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25
°
C
WIRE BOND LIMIT
20
200
10
TC
≤
25
°
C
100
μ
s
1 ms
dc
0.01
0.1
0.5
2
5
Figure 6. Active Region Safe Operating Area
100
50
300
CURVES APPLY BELOW
RATED VCEO
MJD50
MJD47
500
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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