參數(shù)資料
型號: MJD47T4
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA
封裝: TO-252, DPAK-3
文件頁數(shù): 6/6頁
文件大?。?/td> 145K
代理商: MJD47T4
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MJD47
6/6
相關(guān)PDF資料
PDF描述
MJD47 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD50T4 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD6036 4 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD6036-1 4 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD6036T4 4 A, 80 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD47T4G 功能描述:兩極晶體管 - BJT 1A 250V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD47TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD47TF 制造商:Fairchild Semiconductor Corporation 功能描述:MULTIPLEXER IC ROHS COMPLIANT:NO
MJD47TF-CUT TAPE 制造商:Fairchild 功能描述:MJD Series NPN 1.56 W 250 V 1 A SMT Epitaxial Silicon Transistor - TO-252-3
MJD49T4 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2