參數(shù)資料
型號: MJD360T4-A
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
封裝: ROHS COMPLIANT, TO-252, DPAK-3
文件頁數(shù): 1/7頁
文件大?。?/td> 0K
代理商: MJD360T4-A
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
August 2009
Doc ID 16126 Rev 1
1/7
7
MJD360T4-A
MJD361T4-A
Low voltage complementary power transistors
Features
Those devices are qualified for automotive
application
Low collector emitter saturation voltage
Surface-mounting TO-252 power package in
tape and reel
Applications
General purpose switching and amplifier
transistor
Description
The devices are manufactured in planar
technology with “base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1.
Internal schematic diagrams
DPAK
TO-252
1
3
TAB
Table 1.
Device summary
Order code
Marking
Polarity
Package
Packaging
MJD360T4-A
MJD360
NPN
DPAK
Tape and reel
MJD361T4-A
MJD361
PNP
相關PDF資料
PDF描述
MJD361T4-A 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA
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相關代理商/技術參數(shù)
參數(shù)描述
MJD361T4-A 功能描述:兩極晶體管 - BJT LV Complimentary 60V Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD41C 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS