- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182422 > MJD32C-TP (MICRO COMMERCIAL COMPONENTS) 3 A, 100 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD32C-TP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPACK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 0K |
| 代理商： | MJD32C-TP |
Silicon
PNP epitaxial planer
Transistors
Features
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-100
V
VCBO
Collector-Base Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
PC
Collector Dissipation
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-65 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-30mAdc, IB=0)
-100
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0)
-100
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-1mAdc, IC=0)
-5
---
Vdc
ICEO
Collector Cutoff Current
(VCE=-60Vdc, IB=0)
---
-50
uAdc
IEBO
Emitter Cutoff Current
(VEB=-5Vdc, IC=0)
---
-1
mAdc
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-0.375Adc) (note 1)
---
----
-1.2
Vdc
fT
Transition frequency
(VCE=-10Vdc,IC=-0.5Adc,fT=1KHz)
3
---
MHZ
Revision:
2
20
10/11/03
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
DPACK
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.235
0.245
5.97
6.22
B
0.205
0.215
5.21
5.46
C
0.086
0.094
2.19
2.38
D
0.025
0.035
0.64
0.89
E
0.035
0.045
0.99
1.14
F
0.250
0.265
6.35
6.73
G
0.090
2.28
J
0.018
0.023
0.48
0.58
K
0.020
---
0.51
---
S
0.370
0.410
9.40
10.42
V
0.035
0.050
0.88
1.27
A
S
V
B
D
G
C
E
J
K
1
2
3
F
MJD
32C
ICES
Collector Cutoff Current
(VCE=-100Vdc, VEB=0)
(IC=-3Adc, VCE=-4Vdc)
VBE(on)
Base-Emitter Voltage
(IC=-3Adc, VCE=-4Vdc ) (note 1)
---
-1.8
Vdc
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
Electrically similar to popular TIP32 Series
Designed for general purpose amplifier and low speed switching
applications.
1.25
W
---
-20
uAdc
(IC=-1Adc, VCE=-4Vdc)
25
10
---
50
---
1.
Pulse Test: PW≤300s, Duty Cycle≤2%
Note:
Maximum Thermal Resistance: 100
oC/W Junction to Ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD360T4-A | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD361T4-A | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD41CI | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD42C-1 | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD44E3-1 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32RL | 功能描述:兩極晶體管 - BJT 3A 40V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32RLG | 功能描述:兩極晶體管 - BJT 3A 40V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32T4 | 功能描述:兩極晶體管 - BJT 3A 40V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32T4G | 功能描述:兩極晶體管 - BJT 3A 40V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32TF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。