參數(shù)資料
型號(hào): MJD31TF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 82K
代理商: MJD31TF
2001 Fairchild Semiconductor Corporation
MJD31/
31C
Rev. A2, June 2001
Typical Characteristics (Continued)
Figure 7. Power Derating
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相關(guān)PDF資料
PDF描述
MJD32-I 3 A, 40 V, PNP, Si, POWER TRANSISTOR
MJD32C-I 3 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD32BT4 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA
MJD31BT4 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD32CT4-A 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD32 制造商:Motorola Inc 功能描述:
MJD32/32C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications
MJD32-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD32B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD32BT4 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2