- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182422 > MJD31C-1 (ON SEMICONDUCTOR) 3 A, 100 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD31C-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MJD31C-1 |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 6
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C
u 400 V
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO
40
100
Vdc
CollectorBase Voltage
MJD31, MJD32
MJD31C, MJD32C
VCB
40
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current Continuous
Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
15
0.12
W
W/
°C
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.56
0.012
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+ 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
8.3
°C/W
Thermal Resistance, JunctiontoAmbient*
RqJA
80
°C/W
Lead Temperature for Soldering Purposes
TL
260
°C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DPAK3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Y
= Year
WW
= Work Week
xx
= 1, 1C, 2, or 2C
G
= PbFree Package
1 2
3
4
YWW
J3xxG
1
2
3
4
YWW
J3xxG
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD32C-1 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD31CI | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD31C-I | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31I | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD32C-TP | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31C-13 | 功能描述:兩極晶體管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
| MJD31CEITU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| MJD31CG | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。