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參數(shù)資料
| 型號(hào)： | MJD210-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MJD210-1 |
MJD200 MJD210
http://onsemi.com
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD200-1 | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
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