- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95947 > MJD210-1 (ON SEMICONDUCTOR) 5 A, 25 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJD210-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MJD210-1 |
MJD200 MJD210
http://onsemi.com
4
IC, COLLECTOR CURRENT (AMP)
h FE
,DC
CURRENT
GAIN
Figure 5. DC Current Gain
Figure 6. “On” Voltage
IC, COLLECTOR CURRENT (AMP)
200
400
0.07 0.1
0.3
5
0.05
100
80
60
40
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 7. Temperature Coefficients
20
0.7 1
3
2
0.5
25°C
TJ = 150°C
-55°C
2
0.05
IC, COLLECTOR CURRENT (AMP)
5
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
TJ = 25°C
V,
VOL
TAGE
(VOL
TS)
NPN
MJD200
PNP
MJD210
VCE = 1 V
VCE = 2 V
5
0.05
3
200
400
100
80
60
40
20
h FE
,DC
CURRENT
GAIN
25°C
TJ = 150°C
-55°C
VCE = 1 V
VCE = 2 V
V,
VOL
TAGE
(VOL
TS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
θVC for VCE(sat)
θVB for VBE
2
0.05
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
V,
TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+2.5
+2
+1.5
+1
0
-0.5
-1
-1.5
-2
+0.5
-2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
V,
TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+2.5
+2
+1.5
+1
0
-0.5
-1
-1.5
-2
+0.5
-2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
5
0.07 0.1
0.3
0.2
0.7 1
2
0.5
*APPLIES FOR IC/IB ≤ hFE/3
*θVC for VCE(sat)
θVB for VBE
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD200-1 | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。