- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95947 > MJD200-1 (ON SEMICONDUCTOR) 5 A, 25 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJD200-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MJD200-1 |
MJD200 MJD210
http://onsemi.com
5
t, TIME (ms)
0.01
0.02
0.05
1
2
5
10
20
50
100
200
0.1
0.5
0.2
1
0.2
0.1
0.05
r(t)
,TRANSIENT
THERMAL
RθJC(t) = r(t) θJC
RθJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
RESIST
ANCE
(NORMALIZED)
Figure 8. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
30
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 9. Active Region Safe Operating Area
500 s
dc
1
3
1ms
20
10
7
5
3
2
1
0.3
100 s
TJ = 150°C
I C
,COLLECT
OR
CURRENT
(AMP)
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Case 369 may be ordered by adding a “–1” suffix to the
device title (i.e. MJD200–1)
200
VR, REVERSE VOLTAGE (VOLTS)
20
40
70
100
30
Figure 10. Capacitance
50
20
10
6
4
2
1
0.4
C,
CAP
ACIT
ANCE
(pF)
0.6
TJ = 25°C
MJD200 (NPN)
MJD210 (PNP)
Cob
Cib
相關PDF資料 |
PDF描述 |
|---|---|
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| MJD200RL | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200RLG | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200T4 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。