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參數(shù)資料
| 型號： | MJD200-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 112K |
| 代理商： | MJD200-1 |
MJD200 MJD210
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
RθJC
RθJA
10
89.3
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
25
—
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ICBO
—
100
nAdc
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
IEBO
—
100
nAdc
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 500 mAdc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
hFE
70
45
10
—
180
—
—
Collector–Emitter Saturation Voltage (2)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2 Adc, IB = 200 mAdc)
(IC = 5 Adc, IB = 1 Adc)
VCE(sat)
—
0.3
0.75
1.8
Vdc
Base–Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc)
VBE(on)
—
1.6
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (3)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
65
—
MHz
Output Capacitance
MJD200
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD210
Cob
—
80
120
pF
*When surface mounted on minimum pad sizes recommended.
(continued)
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle [ 2%.
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle [ 2%.
(3) fT = hfe ftest.
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PDF描述 |
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| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| MJD200RL | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200RLG | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200T4 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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