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參數(shù)資料
| 型號(hào)： | MJD13003 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, 3 PIN |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | MJD13003 |
MJD13003
http://onsemi.com
7
The Sale Operating Area figures shown in Figures 11 and 12
are specified ratings for these devices under the test
conditions shown.
I C
,COLLECT
OR
CURRENT
(AMP)
I C
,COLLECT
OR
CURRENT
(AMP)
1.6
0
800
0.4
100
300
TJ ≤
100°C
IB1 = 1 A
500
700
VBE(off) = 9 V
0
0.8
VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
1.2
500 s
1 ms
dc
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
10
500
1
0.5
2
0.2
0.05
0.02
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
20
50
100
200
Figure 11. Active Region Safe Operating
Area
TC ≤ 25°C
Figure 12. Reverse Bias Safe Operating Area
0.1
0.005
300
200
400
600
5 V
1.5 V
CURVES APPLY BE
LOW
RATED VCEO
100 s
3 V
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TC = 25
_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25
_C. Allowable current at the voltages
shown on Figure 11 may be found at any case temperature
by applying curves on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during
reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives RBSOA characteristics.
Figure 13. Power Derating
25
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
2.5
0
2
1.5
1
0.5
TA TC
TC
TA (SURFACE MOUNT)
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