參數(shù)資料
型號: MJB42CG
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 6 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 0K
代理商: MJB42CG
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 1
1
Publication Order Number:
MJB41C/D
MJB41C (NPN),
MJB42C (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
D2PAK for Surface Mount
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically the Same as TIP41 and T1P42 Series
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
Continuous
Peak
IC
6.0
10
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
65
0.52
W
W/
_C
Total Power Dissipation
@ TA = 25_C
Derate above 25
_C
PD
2.0
0.016
W
W/
_C
Unclamped Inductive Load Energy (Note 1)
E
62.5
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
1.92
_C/W
Thermal Resistance,
JunctiontoAmbient
RqJA
62.5
_C/W
Thermal Resistance,
JunctiontoAmbient (Note 2)
RqJA
50
_C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from Case for 10 Seconds
TL
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
Device
Package
Shipping
ORDERING INFORMATION
MJB41C
D2PAK
D2PAK
CASE 418B
STYLE 1
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
J4xCG
AYWW
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
J4xC
= Specific Device Code
x = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
MJB41CT4G
D2PAK
(PbFree)
800/Tape & Reel
MJB42C
D2PAK
50 Units/Rail
MJB42CT4
D2PAK
800/Tape & Reel
http://onsemi.com
MJB42CT4G
D2PAK
(PbFree)
800/Tape & Reel
MJB42CG
D2PAK
(PbFree)
50 Units/Rail
MJB41CT4
D2PAK
800/Tape & Reel
MJB41CG
D2PAK
(PbFree)
50 Units/Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關PDF資料
PDF描述
MJB5742T4G 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJD112I 2 A, 100 V, NPN, Si, POWER TRANSISTOR
MJD117-1 2 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD117T4 2 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD112-1 2 A, 100 V, NPN, Si, POWER TRANSISTOR
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