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參數(shù)資料
| 型號： | MJB32BT4 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-263AB |
| 封裝： | TO-263, D2PAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 122K |
| 代理商： | MJB32BT4 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
62.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
VCE = -60 V
-50
A
ICES
Collector Cut-off
Current (VBE = 0)
VCE = -80 V
-20
A
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -5 V
-0.1
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -30 mA
-80
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -3 A
IB = -375 mA
-1.2
V
VBE
Base-Emitter Voltage
IC = -3 A
VCE = -4 V
-1.8
V
hFE
DC Current Gain
IC = -1 A
VCE = -4 V
IC = -3 A
VCE = -4 V
25
10
50
hfe
Small Signall Current
Gain
IC = -0.5 A VCE = -10 V
f = 1 KHz
IC = -0.5 A VCE = -10 V
f = 1 MHz
20
3
Pulsed : pulse duration = 300 s, duty cycle ≤ 2%
Safe Operating Area
Derating Curves
MJB32B
2/5
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