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參數(shù)資料
| 型號： | MJ14003G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 197A-05, TO-3, TO-204, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MJ14003G |
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
0.584
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
MJ14001
MJ14002, MJ14003
VCEO(sus)
60
80
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
MJ14001
(VCE = 40 Vdc, IB = 0)
MJ14402, MJ14003
ICEO
1.0
mA
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 V)
MJ14001
(VCE = 80 Vdc, VBE(off) = 1.5 V)
MJ14002, MJ14003
ICEX
1.0
mA
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MJ14001
(VCB = 80 Vdc, IE = 0)
MJ14002, MJ14003
ICBO
1.0
mA
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mA
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
(IC = 60 Adc, VCE = 3.0 V)
hFE
30
15
5.0
100
CollectorEmitter Saturation Voltage (Note 1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VCE(sat)
1.0
2.5
3.0
Vdc
BaseEmitter Saturation Voltage (Note 1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VBE(sat)
2.0
3.0
4.0
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
2000
pF
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
100
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0 7.0
100
20
3.0
10
20
50
0.5
0.1
dc
I C
,COLLECT
OR
CURRENT
(AMP)
1.0 ms
0.2
0.3
0.7
1.0
2.0
5.0
7.0
10
50
30
70
30
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C
5.0 ms
MJ14001
MJ14002, MJ14003
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 13. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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