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參數(shù)資料
| 型號(hào)： | MJ14003G |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 197A-05, TO-3, TO-204, 2 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | MJ14003G |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 6
1
Publication Order Number:
MJ14001/D
MJ14001 (PNP),
MJ14002* (NPN),
MJ14003* (PNP)
*Preferred Devices
HighCurrent Complementary
Silicon Power Transistors
Designed for use in highpower amplifier and switching circuit
applications.
Features
High Current Capability IC Continuous = 60 Amperes
DC Current Gain hFE = 15100 @ IC = 50 Adc
Low CollectorEmitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max)
@ IC = 50 Adc
PbFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MJ14001
MJ14002/03
VCEO
60
80
Vdc
CollectorBase Voltage
MJ14001
MJ14002/03
VCBO
60
80
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
60
Adc
Base Current Continuous
IB
15
Adc
Emitter Current Continuous
IE
75
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
300
1.71
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
40
80
120
240
360
90
P D
,POWER
DISSIP
ATION
(W
ATTS)
210
0
160
200
0
30
270
330
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJ14001
TO3
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
60 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080 VOLTS, 300 WATTS
MJ14002
TO3
100 Units/Tray
MJ14003
TO3
100 Units/Tray
http://onsemi.com
MJ14003G
TO3
(PbFree)
100 Units/Tray
MJ14002G
TO3
(PbFree)
100 Units/Tray
MJ14001G
TO3
(PbFree)
100 Units/Tray
TO204 (TO3)
CASE 197A
STYLE 1
MARKING
DIAGRAM
MJ1400x = Device Code
xx = 1, 2, or 3
G
= PbFree Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
MJ1400xG
AYYWW
MEX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ14003 | 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| MJ14003 | 70 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| MJ14003.MOD | 70 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| MJ15002.MOD | 15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15002 | 15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
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