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參數(shù)資料
| 型號： | MJ11016 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 157K |
| 代理商： | MJ11016 |
1
Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
Monolithic Construction with Built–in Base Emitter Shunt Resistor
Junction Temperature to +200_C
MAXIMUM RATINGS
Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
Collector–Emitter Voltage
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25_C
Derate above 25
_C @ TC = 100_C
PD
200
1.15
Watts
W/
_C
Operating Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.87
_C/W
Maximum Lead Temperature for
Soldering Purposes for
v 10 Seconds.
TL
275
_C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
PNP
MJ11013
MJ11015
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
NPN
MJ11012
MJ11014
MJ11016
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11012/D
Motorola, Inc. 1995
MJ11013
MJ11015
MJ11012
MJ11014
MJ11016
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
*Motorola Preferred Device
PNP
NPN
*
CASE 1–07
TO–204AA
(TO–3)
REV 1
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| MJ11031R1 | 50 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| MJ11032R1 | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ11032 | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| MJ11033R1 | 50 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| MJ11028R1 | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ11016 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11016G | 功能描述:達(dá)林頓晶體管 30A 120V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11017 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 PNP 150V -15A 175W BEC |
| MJ11018 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11019 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor |
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